Innoscience delivers 40V bi-directional GaN HEMT with low RDS(on) for smart mobile devices, chargers and adapters
17 February 2022 – Innoscience Technology, a company founded to create a global energy ecosystem based on high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power solutions, announced the INN40W08, a 40V bi-directional GaN-on-Si enhancement mode high-electron-mobility-transistor (HEMT) for mobile devices, including laptops and cellular phones. The INN40W08 HEMT has been developed using the company’s advanced InnoGaN […]
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